Structural, electrical and magnetic characterizations of Ni/Cu/p-Si Schottky diodes prepared by liquid phase epitaxy

Extraction of Schottky diode parameters from forward current-voltage characteristics

S. K. Cheung, N.W. Cheung · Applied Physics Letters · 1986 · 2.7K citations

Device Modeling, Semiconductor Technology, Electrical Engineering +11

Recent advances in Schottky barrier concepts

R. T. Tung · Materials Science and Engineering R Reports · 2001 · 1.2K citations

Engineering, Physics, Experimental Analysis +4

Barrier heights of real Schottky contacts explained by metal-induced gap states and lateral inhomogeneities

Winfried Mönch · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1999 · 436 citations

Engineering, Doped Semiconductors, Semiconductor Device +18

Temperature dependent barrier characteristics of CrNiCo alloy Schottky contacts on <i>n</i>-type molecular-beam epitaxy GaAs

Ahmet Gümüş, A. Türüt · Journal of Applied Physics · 2002 · 238 citations

Materials Science, Semiconductors, Electrical Engineering +13

Current-voltage characteristics and barrier parameters of Pd₂Si/p-Si(111) Schottky diodes in a wide temperature range

Subhash Chand, Jitendra Kumar · Semiconductor Science and Technology · 1995 · 204 citations

Activation Energy, Semiconductor Technology, Electrical Engineering +14