Ge 2 Sb 2 Te 5 /SnSe 2 nanocomposite multilayer thin films for phase change memory application

Phase-change materials for rewriteable data storage

Matthias Wuttig, Noboru Yamada · Nature Materials · 2007 · 3.5K citations

Materials Engineering, Materials Science, Phase Transitions +5

Structural transformations of Ge2Sb2Te5 films studied by electrical resistance measurements

I. Friedrich, V. Weidenhof, Walter K. Njoroge et al. · Journal of Applied Physics · 2000 · 655 citations

Electrical Resistance, Engineering, Crystal Growth Technology +21

Investigation of SnSe, SnSe2, and Sn2Se3 alloys for phase change memory applications

Kyung-Min Chung, Daniel Wamwangi, Michael Woda et al. · Journal of Applied Physics · 2008 · 189 citations

Materials Science, Materials Engineering, Sn2se3 Alloys +14

Ovonic unified memory - a high-performance nonvolatile memory technology for stand-alone memory and embedded applications

M. Gill, T. Lowrey, Jongsun Park · 2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315) · 2005 · 91 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +17

Effect of Al and Cu doping on the crystallization properties of the phase change materials SbTe and GeSb

Simone Raoux, Martin Salinga, Jean Jordan‐Sweet et al. · Journal of Applied Physics · 2007 · 90 citations

Materials Engineering, Materials Science, Electrical Engineering +12