InGaP orange light-emitting diodes on Si substrates

Abstract

InGaP light-emitting diodes (LEDs) that operate in the 600 nm region were fabricated on Si substrates using GaAsP/GaAs buffer layers. InGaP layers were grown by metalorganic-chloride vapor phase epitaxy, and GaAs and GaAsP buffer layers were grown by metalorganic vapor phase epitaxy at atmospheric pressure. An orange color emission was observed under room light at 20 mA dc injection. No degradation was observed in LED characteristics after 2000 h operation at an injection current of 500 A/cm2 despite the high dislocation density of 108 cm−2.