680-nm band GaInP/AlGaInP tapered stripe laser

Abstract

A gain-guiding tapered stripe laser was fabricated using a Ga0.5In0.5P/(Al0.5Ga0.5)0.5In0.5P double heterostructure wafer grown by metalorganic chemical vapor deposition. The laser showed a continuous wave (cw) threshold current of 48 mA, a maximum temperature for cw operation of 81 °C, an aspect ratio of about 2, and an astigmatism near 25 μm. The emission wavelength was 684 nm. Thirty-two devices have been operating without significant degradation for more than 2000 h at 50 °C with a constant output power of 3 mW.