Physical Review Letters · 1985 · 222 citations · 6 references
EngineeringElectron DiffractionSemiconductorsElectron SpectroscopyTransit RegionCharge Carrier TransportElectrical EngineeringPhysicsHot-electron SpectroscopyCosmic RayFermi SeaQuantum ChemistrySynchrotron RadiationMicrowave SpectroscopyNatural SciencesSpectroscopyApplied PhysicsCondensed Matter PhysicsInjected-hot-electron Transport
Using the new experimental technique of hot-electron spectroscopy we have, for the first time, observed electrons in extreme nonequilibrium. When the transit-region width is comparable to the calculated hot-electron mean free path, two peaks are observed in the measured spectrum. The high-energy peak corresponds to quasiballistic electrons suffering few, if any, collisions in the transit region. The low-energy peak is due to excitation of the Fermi sea by the injected hot electrons.
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D. ter Haar · Journal of the Franklin Institute · 1966 · 2.3K citations
Planar-doped barriers in GaAs by molecular beam epitaxy
Rohit Malik, T. R. AuCoin, R. L. Ross et al. · Electronics Letters · 1980 · 247 citations
Hot-Electron Spectroscopy of GaAs
J. R. Hayes, A. F. J. Levi, W. Wiegmann · Physical Review Letters · 1985 · 142 citations
Semiconductors, Semiconductor Technology, Electronic Devices +15