Japanese Journal of Applied Physics · 1990 · 25 citations · 12 references
Optical MaterialsEngineeringLaser ScienceLaser ApplicationsLaser MaterialOptoelectronic DevicesHigh-power LasersSemiconductorsIi-vi SemiconductorSemiconductor LasersOptical PropertiesCompound SemiconductorMaterials SciencePhotonicsPhysicsOptoelectronic MaterialsZns 0.18Applied PhysicsLasing TemperatureLaser OscillationOptoelectronics
Photopumped blue laser oscillation was achieved up to near room temperature (280 K) in a ZnS 0.18 Se 0.82 /ZnSe multilayer structure grown by MOVPE. This significant improvement in the lasing temperature is attributed to the higher heterobarrier which prevents thermoionic emission and to the multilayer structure which has an average lattice constant matched to the GaAs substrate at the growth temperature of 515°C. The threshold excitation optical power density below 200 K where the thermoionic emission is negligible is less than 50 kW/cm 2 , which corresponds to a current density of 14 kA/cm 2 .
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Growth of <i>p</i>-type ZnSe:Li by molecular beam epitaxy
Hai‐Ping Cheng, J. M. DePuydt, J. E. Potts et al. · Applied Physics Letters · 1988 · 109 citations
Materials Science, Materials Engineering, Electrical Engineering +11
Electron beam pumped II–VI lasers
S. Colak, Brian Fitzpatrick, R. N. Bhargava · Journal of Crystal Growth · 1985 · 62 citations