Journal of Applied Physics · 1997 · 53 citations · 10 references
Natural SciencesMaterials EngineeringMaterials ScienceSemiconductor DevicesSemiconductor MaterialsThin FilmsAluminum OxidesChemical Vapor DepositionEpitaxial GrowthSemiconductor DefectsStacking FaultsThin Film Optical PropertiesElectron Microscopy Of Stacking FaultsFace-centered Cubic StructureHigh-resolution Electron MicroscopyIntrinsic Stacking FaultsMetalorganic Chemical Vapor DepositionOptical PropertiesStacking Fault FormationStacking Faults In Face-centered Cubic Crystals
We have investigated growth characteristics and atomic structure of defects in AlN thin films grown by the metalorganic chemical vapor deposition technique on the (101̄2) r plane of α-Al2O3. The AlN films were single crystal and exhibited the following epitaxial relationship: (112̄0)AlN∥(101̄2)sap with the in-plane alignment of [0001]AlN∥[1̄011]sap. Using high-resolution electron microscopy and multislice image simulation, the predominant defects in AlN thin films grown on the r plane of α-Al2O3 were found to be low-energy intrinsic stacking faults of type I1 lying in the basal plane. This fault, with a 1/6[202̄3] resultant displacement vector, can be formed by removing one (0002) plane and then shearing the remaining half-crystal by displacement of 1/3[101̄0]. The faults appear as a single face-centered-cubic stack ABC inserted into the normal …ABAB… hexagonal sequence. We discuss the possible role of these defects in optical properties of semiconductor devices.
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