Applied Physics Letters · 1988 · 12 citations · 15 references
Materials ScienceMaterials EngineeringElectrical EngineeringSemiconductorsGaas-al-gaas StructureEngineeringAluminium NitrideTop LayerCompound SemiconductorApplied PhysicsSemiconductor MaterialMolecular Beam EpitaxyEpitaxial GrowthOptoelectronicsMigration-enhanced Epitaxy
The GaAs-Al-GaAs structure is grown using migration-enhanced epitaxy (MEE) method at low temperature on a molecular beam epitaxy machine. With MEE the interdiffusion between Al and GaAs is reduced by a large amount, and the morphology is improved by a large degree. Still, Raman spectrum indicates poor crystallinity for the GaAs of the top layer. The effect of different annealing temperatures on the interdiffusion is also studied.
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