G. L. Harris

On the origin of periodic surface structure of laser-annealed semiconductors

G.N. Maracas, G. L. Harris, C. A. Lee et al. · Applied Physics Letters · 1978 · 96 citations

Optical Materials, Engineering, Laser Applications +17

Realization of improved metallization‐Ti/Al/Ti/W/Au ohmic contacts to n‐GaN for high temperature application

Abhishek Motayed, Albert V. Davydov, W. J. Boettinger et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2005 · 13 citations

Growth of GaAs-Al-GaAs by migration-enhanced epitaxy

B. Tadayon, S. Tadayon, Michael G. Spencer et al. · Applied Physics Letters · 1988 · 12 citations

Materials Science, Materials Engineering, Electrical Engineering +12

Sims determinations of ion-implanted depth distributions

D. P. Leta, George H. Morrison, G. L. Harris et al. · International Journal of Mass Spectrometry and Ion Physics · 1980 · 12 citations

Ion Implantation, Engineering, Physics +5