Acceptor doping of bridgman-grown CdxHg1−xTe

Effects of annealing on the electrical properties of Cd<i>x</i>Hg1−<i>x</i>Te

C. L. Jones, M.J.T. Quelch, P. Capper et al. · Journal of Applied Physics · 1982 · 103 citations

Natural Sciences, Materials Engineering, Materials Science +15

Carrier freeze-out and acceptor energies in p-type Hg1−xCdxTe

C.T. Elliott, I. Melngailis, T. C. Harman et al. · Journal of Physics and Chemistry of Solids · 1972 · 83 citations

Natural Sciences, Materials Science, Physics +14

The behaviour of selected impurities in CdxHg1−xTe

P. Capper · Journal of Crystal Growth · 1982 · 75 citations

Natural Sciences, Materials Engineering, Materials Science +9

The effects of growth speed on the compositional variations in crystals of cadmium mercury telluride

B.E. Bartlett, P. Capper, J.E. Harris et al. · Journal of Crystal Growth · 1979 · 64 citations

Natural Sciences, Materials Engineering, Materials Science +11

Doping properties of selected impurities in Hg1−x Cdx Te

Eric S. Johnson, J. L. Schmit · Journal of Electronic Materials · 1977 · 60 citations

Natural Sciences, Materials Science, Physics +12