Applied Physics Letters · 2010 · 36 citations · 21 references
Natural SciencesMaterials SciencePhysicsMaterials PhysicsOptical MaterialsSemiconductor MaterialsLuminescent MaterialsMetal Oxide NanomaterialsOptical Properties Of SemiconductorsOxide SemiconductorsSemiconductor NanomaterialsSemiconductor SurfacesBand Tail StatesConduction BandDisorderNanocrystalline Thin FilmsNanocrystalsPhotoluminescenceRadiative RecombinationSurface Defects
We report the UV photoluminescence properties of SnO2 nanocrystalline films. A free exciton decay centered at 3.7 eV and a strong surface localized exciton emission peak at 3.3 eV have been observed at room temperature. The peak energy of the surface localized exciton emission exhibits a redshift with increasing temperature and a blueshift with increasing excitation intensity. The surface localized exciton emission is considered to originate from the radiative recombination of exciton within the surface region of SnO2 nanocrystals. The surface defects and local disorder are believed to be responsible for the formation of band tail states at the conduction band and potential well within the band tails.
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Temperature dependence of the energy gap in semiconductors
Y. P. Varshni · Physica · 1967 · 5.3K citations
<i>Elements of X-ray Crystallography</i>
Leonid V. Azároff, Richard B. Zipin · Physics Today · 1969 · 666 citations