Structural and Photoelectrical Properties of Sprayed ?-In2S3 Thin Films

Abstract

β-In2S3 thin films have been prepared by the spray pyrolysis technique. X-ray diffraction (XRD) analysis and scanning electron microscopy (SEM) micrographs showed a good homogeneity of these layers. Microanalysis and XPS measurements have detected little oxygen in the films present in In2O3 form. Photoconductivity measurements were carried out within the range of wavelengths in the visible spectrum at different modulation frequencies f and bias voltages V ranging from 5 to 300 Hz and from 3 to 25 V, respectively. The band gap energy Eg, deduced from these spectra, has approximately the same value as that obtained from spectrophotometric transmission and reflection measurements (Eg = 2.05 eV).