Applied Physics Letters · 1989 · 113 citations · 5 references
Natural SciencesMaterials SciencePhysicsMicrofabricationPlasma PhysicsSemiconductor DevicesEtching ProcessesHigh-frequency Semiconductor DevicesHigh-temperature PlasmasMagnetized PlasmaPlasma ConfinementPlasma-surface InteractionsAnisotropic EtchingEtch RateEtchingPlasma EtchingSilicon Etching
A 13.56 MHz rf inductively coupled diffusion plasma confined by a weak magnetic field is shown to produce high etch rates and high plasma densities. With a substrate bias of −160 V and 1 mTorr of pure SF6, silicon has been etched anisotropically at a rate of 0.7 μm min−1 with a selectivity to SiO2 of about 5.
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