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Monolithic integration of high electron mobility InAs-based heterostructure on exact (001) Silicon using a GaSb/GaP accommodation layer

L. Desplanque, Salim El Kazzi, Christophe Coinon, S. Ziegler, Bernardette Kunert, Andreas Beyer, Kerstin Volz, W. Stolz, Y. Wang, P. Ruterana,

Applied Physics Letters · 2012 · 31 citations · 15 references

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15

Quantitative measurement of displacement and strain fields from HREM micrographs

Martin Hÿtch, E. Snoeck, R. Kilaas · Ultramicroscopy · 1998 · 2.7K citations

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Nanometre-scale electronics with III–V compound semiconductors

Jesús A. del Alamo · Nature · 2011 · 1.7K citations

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Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors

Hyunhyub Ko, Kuniharu Takei, Rehan Kapadia et al. · Nature · 2010 · 412 citations · Full text

, , +16

GaP-nucleation on exact Si (001) substrates for III/V device integration

Kerstin Volz, Andreas Beyer, Wiebke Witte et al. · Journal of Crystal Growth · 2010 · 337 citations

, , +13

Electron concentrations and mobilities in AlSb/InAs/AlSb quantum wells

G. Tuttle, H. Kroemer, John H. English · Journal of Applied Physics · 1989 · 205 citations · Full text

, , +17