Concepedia
Journal of Crystal Growth · 1986 · 38 citations · 22 references
Natural SciencesMaterials ScienceSemiconductor DevicesEpitaxial GrowthEpitaxial MaterialsSystem Design Optimization
22
The Preparation and Properties of Vapor-Deposited Epitaxial GaAs[sub 1−x]P[sub x] Using Arsine and Phosphine
J. J. Tietjen, J. A. Amick · Journal of The Electrochemical Society · 1966 · 276 citations
Natural Sciences, Materials Science, Physics +17
Vapor growth of epitaxial GaAs: A summary of parameters which influence the purity and morphology of epitaxial layers
J.V. DiLorenzo · Journal of Crystal Growth · 1972 · 135 citations
Engineering, Electrical Engineering, Materials Science +16
CVD in Stagnation Point Flow: An Evaluation of the Classical 1D Treatment
Carl J. Houtman, David B. Graves, Klavs F. Jensen · Journal of The Electrochemical Society · 1986 · 132 citations
Engineering, Chemical Engineering, Materials Engineering +16
A feedback method for investigating carrier distributions in semiconductors
G. L. Miller · IEEE Transactions on Electron Devices · 1972 · 123 citations
Engineering, Electrical Engineering, Microelectronics +16
Hydrodynamic description of CVD processes
G. Wahl · Thin Solid Films · 1977 · 123 citations
Natural Sciences, Chemical Engineering, Physics +12