Silicon-Monohydride Termination of Silicon-111 Surface Formed by Boiling Water

Abstract

Aqueous HF etching of the silicon surface removes surface oxide, leaving a silicon surface terminated inhomogeneously by silicon mono-, di-, and trihydrides. We studied the effect of the immersion in water following the HF etching, on the surface hydride structure on Si(111), by measuring Si-H stretching vibration using infrared absorption spectroscopy. Immersion in boiling water (100°C) for 600 s produces a surface homogeneously terminated with silicon monohydride normal to the surface and free of oxidation. We concluded that water can remove silicon dihydride and trihydride and leave a silicon surface terminated with monohydride. The homogeneous surface has a low defect density of less than 0.5%.