Monostable switching in amorphous chalcogenide semiconductors

Abstract

Discusses the thickness dependence of the threshold voltage of amorphous chalcogenide films operated as monostable devices. For pristine films the threshold field is independent of both composition and thickness. Since no correlation is observed with the weak-field resistance of the blocking state, it is proposed that monostable switching of virgin devices arises from impact ionization. In formed devices the threshold voltage, holding current and holding voltage appear to be related to transition temperature. Such behaviour appears to be compatible with thermal avalanching.