CVD Growth and Characterisation of SiC Epitaxial Layers on Faces Perpendicular to the (0001) Basal Plane - Concepedia

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CVD Growth and Characterisation of SiC Epitaxial Layers on Faces Perpendicular to the (0001) Basal Plane

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References

1998

Year

C. Hallin, Alexsandre Ellison, Ivan G. Ivanov, Anne Henry, Nguyên Tiên Són, Erik Janzén

Materials science forum

Materials EngineeringEngineeringPhysicsCvd GrowthSic Epitaxial LayersSurface ScienceApplied PhysicsMolecular Beam EpitaxyEpitaxial GrowthChemical Vapor DepositionCarbideBasal Plane

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