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Adsorption controlled molecular beam epitaxy of rubidium barium bismuth oxide
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1990
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EngineeringChemistrySuperconductivityHigh Tc SuperconductorsRubidium Barium BismuthMolecular Beam EpitaxyMaterials ScienceMaterials EngineeringHigh-tc SuperconductivitySimple Cubic PerovskiteNanotechnologyRb FractionsOxide ElectronicsChemisorptionGallium OxideSticking CoefficientsMaterial AnalysisSurface ScienceApplied PhysicsMagnesium-based Composite
Measurements of the sticking coefficients for rubidium, barium, and bismuth have been made during molecular beam epitaxy of (Rb,Ba)BiO3 on MgO. This simple cubic perovskite is a high temperature superconductor for Rb fractions between 0.4 and 0.5. The dependence of the sticking coefficients on substrate temperature, oxygen plasma conditions, and on incident flux composition indicate that in a narrow region of flux compositions, adsorption, and desorption rates of bismuth and rubidium will control the stoichiometry of the film.