Kinetics of gallium adlayer adsorption/desorption on polar and nonpolar GaN surfaces

Abstract

Spectroscopic ellipsometry installed on a GEN-II plasma assisted molecular beam epitaxy machine has been shown to be an effective in situ real time tool for monitoring the kinetics of gallium adlayer adsorption/desorption on the GaN surface. In this work, the authors present data on the study of Ga adsorption/desorption on polar c-plane GaN (0001) and nonpolar m-plane GaN (1−100) surfaces for Ga beam equivalent pressures in the range of 8.96×10−8–1.86×10−7Torr, Ga pulses in the range of 5–360s, and for substrate temperatures between 650 and 750°C.