Publication | Closed Access
AlGaN/GaN HEMTs grown on silicon (001) substrates by molecular beam epitaxy
15
Citations
8
References
2006
Year
Materials EngineeringWide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsAluminum Gallium NitrideGan Power DeviceMolecular Beam EpitaxyAlgan/gan Hemts Grown
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