Ground-state energy shift of acceptor-hydrogen complexes in Si and GaAs under uniaxial stress

Abstract

Several low-symmetry, H-containing complexes in semiconductors can be preferentially aligned by an applied stress. Here, the coupling of the ground-state energy to stress, i.e., the defect's piezospectroscopic tensor, has been determined for the acceptor-hydrogen complexes Si:B-H, GaAs:${\mathrm{Be}}_{\mathrm{Ga}}$-H, and GaAs:${\mathrm{C}}_{\mathrm{As}}$-H.