MOVPE of GaN using a specially designed two-flow horizontal reactor

InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama et al. · Japanese Journal of Applied Physics · 1996 · 2.5K citations

Photonics, Electrical Engineering, Engineering +13

High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes

Shuji Nakamura, Masayuki Senoh, Naruhito Iwasa et al. · Applied Physics Letters · 1995 · 594 citations

High-power Blue, Violet Light-emitting Diodes, Engineering +17

Novel metalorganic chemical vapor deposition system for GaN growth

Shuji Nakamura, Yasuhiro Harada, Masayuki Seno · Applied Physics Letters · 1991 · 364 citations · Full text

Materials Science, Materials Engineering, Chemical Engineering +13

Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °C

M. Asif Khan, M. S. Shur, John N. Kuznia et al. · Applied Physics Letters · 1995 · 272 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +8

Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device

Isamu Akasaki, Hiroshi Amano, Shigetoshi Sota et al. · Japanese Journal of Applied Physics · 1995 · 228 citations

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +14