New TiO_x-MIS and Si0₂-MIS silicon solar cells

Abstract

Two new types of solar cells are described in which either a TiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> or a SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> layer is deposited onto p silicon; contacts are obtained by means of a MIS tunnel diode grid. It is shown that the TiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> -MIS cells can be realized by single-mask completely low-temperature processing by employing spin-on of titanium-oxide antireflective coating. Conversion efficiencies of 8 percent at AM1 have been achieved with these cells; they perform even more efficiently at higher illumination levels. With the SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> -MIS cells efficiencies of 12 percent have been reached, at the expense of a slightly more complicated process. A detailed comparison between the two cells is given.