Publication | Closed Access
Use of Monte Carlo models in the development and validation of CD operators
21
Citations
4
References
2005
Year
EngineeringMicroscopyMonte Carlo MethodsMarkov Chain Monte CarloCd OperatorsElectron OpticReliability EngineeringElectron MicroscopyUncertainty QuantificationSystems EngineeringComputational ImagingModeling And SimulationInstrumentationCd Uncertainty BudgetStatisticsCd MetrologyMonte-carlo ModellingPhysicsMonte CarloMicroanalysisProbability TheoryMonte Carlo SamplingSequential Monte CarloMonte Carlo ModelsScanning Probe MicroscopyMonte Carlo MethodApplied PhysicsElectron Microscope
Abstract In this article, different applications of Monte Carlo simulations in scanning electron microscope (SEM) critical dimension (CD) metrology are presented. A first field of application is the analysis of image formation that leads to functional descriptions of secondary electron (SE) signal profiles. From this, algorithms are defined to evaluate the linewidth of microstructures. Monte Carlo generated images are used to validate CD operators and to estimate model‐induced contributions to the CD uncertainty budget. New challenges and new fields of application for Monte Carlo simulations in CD metrology are discussed. Copyright © 2005 John Wiley & Sons, Ltd.
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