Xerographic-mode transient charge technique for probing drift mobility in high-resistivity materials†

Abstract

The xerographic-mode transient charge technique is used to probe the drift mobility in high-resistivity materials. The data from measurements on amorphous selenium-based insulators are very close to those from the conventional electroded transient charge technique and therefore confirm the usefulness of this technique for obtaining charge transport parameters in these materials. This technique is found to be valuable in measuring the drift mobility at high electric field strengths in excess of 5 × 105 V/cm.