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Charge Carrier Production and Mobility in Anthracene Crystals
617
Citations
4
References
1960
Year
Optical MaterialsEngineeringChemistryCharge TransportSemiconductorsElectronic DevicesCharge SeparationAnthracene CrystalsCharge Carrier TransportPhotophysical PropertyPhysicsPhotochemistryOrganic SemiconductorCrystallographyDrift MobilitiesMobilities IncreaseElectronic MaterialsNatural SciencesSurface ScienceApplied PhysicsOptoelectronics
The drift mobilities of electrons and holes in anthracene crystals have been measured using a pulsed photoconductivity technique. The mobilities found at room temperature vary from about 0.3 ${\mathrm{cm}}^{2}$/volt sec to about 3 ${\mathrm{cm}}^{2}$/volt sec, depending on the crystal orientation, and the mobilities increase as the temperature is lowered. The wavelength dependence of the number of charge carriers produced by a pulse of light, as well as other experimental data, indicates that the charge carriers are not produced in the interior of anthracene crystals, but that they are released from a surface layer of the crystal either directly by photons or by excitons which migrate to the surface.
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