Concepedia

Photoluminescence lifetime, absorption and excitation spectroscopy measurements on isoelectronic bound excitons in beryllium-doped silicon

M. L. W. Thewalt, S. P. Watkins, U.O. Ziemelis, E C Lightowlers, M. Henry

Solid State Communications · 1982 · 43 citations · 6 references

DOI

Concepts

References

6

Fluorescent Decay Times of Excitons Bound to Isoelectronic Traps in GaP and ZnTe

J. D. Cuthbert, D. G. Thomas · Physical Review · 1967 · 243 citations

, , +13

Carbon-acceptor pair centers (<i>X</i> centers) in silicon

C. E. Jones, David Schäfer, W. C. Scott et al. · Journal of Applied Physics · 1981 · 78 citations

, , +14

Study of Beryllium and Beryllium-Lithium Complexes in Single-Crystal Silicon

R. K. Crouch, James B. Robertson, T. E. Gilmer · Physical review. B, Solid state · 1972 · 68 citations · Full text

, , +16

Bound exciton recombination in beryllium-doped silicon

M. Henry, E C Lightowlers, Nathan Killoran et al. · Journal of Physics C Solid State Physics · 1981 · 46 citations

, , +17

Excitation spectroscopy on the P, Q, R isoelectronic lines in indium doped silicon

J. Wagner, J. Weber, R. Sauer · Solid State Communications · 1981 · 24 citations

, , +12