Japanese Journal of Applied Physics · 2002 · 17 citations · 3 references
Natural SciencesMaterials EngineeringMaterials ScienceCondensed Matter PhysicsCrystal StructureSemiconductor MaterialsAb Initio MethodsEpitaxial GrowthSemiconductor Crystal GrowthSemiconductor PhysicsSurface PhysicsWide-bandgap SemiconductorsEpitaxial Growth KineticsEpitaxial Growth Of Wide-bandgap SemiconductorsFirst-principles ModelingGallium NitrideGallium Nitride (Gan) MaterialsGallium Nitride Crystal GrowthNitrogen KineticsSurface Growth
The epitaxial growth of GaN(0001) is studied microscopically using the first-principles calculation. Because of the unusual nitrogen kinetics on the truncated GaN(0001), we found that the most stable site for nitrogen adatoms is not the original wurtzite lattice site but the H3 site for the case in which there is one N adatom and also the case in which there is one N adatom and one Ga adatom on the (2×2)-Ga surface. In order to locate the N adatom at the original wurtzite site naturally, two Ga adatoms are needed for each N adatom on the (2×2)-Ga surface.
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Isamu Akasaki Isamu Akasaki, Hiroshi Amano · Japanese Journal of Applied Physics · 1997 · 661 citations · Full text
Low Temperature Growth of Gallium Nitride
Hideki Gotoh, Toru Suga, Hideo Suzuki et al. · Japanese Journal of Applied Physics · 1981 · 51 citations