Zero-gap directional coupler switch integrated into a silicon-on insulator for 13-μm operation

Abstract

A silicon-on insulator (SOI) zero-gap directional coupler switch is studied based on the large-cross-section singlemode rib waveguide condition, the dual-mode interference principle, and the free-carrier plasma dispersion effect, in which the SOI technique uses silicon and silicon dioxide thermal bonding and backpolishing. The SOI is fabricated by potassium hydroxide anisotropic etching. Its insertion loss and cross talk are measured to be less than 4.81 dB and 218.6 dB, respectively, at a wavelength of 1.3 microm and a switching voltage of 0.91 V. Response time is ~210 ns.