Effect of heavy proton and neutron irradiations on epitaxial 4H-SiC Schottky diodes

Wide-bandgap semiconductor ultraviolet photodetectors

E. Monroy, F Omn s, F. Calle · Semiconductor Science and Technology · 2003 · 1.4K citations

Engineering, Electrical Engineering, Materials Science +16

Study of silicon carbide for X-ray detection and spectroscopy

G. Bertuccio, R. Casiraghi · IEEE Transactions on Nuclear Science · 2003 · 144 citations

Engineering, Electrical Engineering, Materials Science +17

Radiation tolerance of epitaxial silicon carbide detectors for electrons, protons and gamma-rays

F. Nava, E. Vittone, P. Vanni et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 2003 · 120 citations · Full text

Engineering, Electrical Engineering, Materials Science +14

Low temperature annealing of electron irradiation induced defects in 4H-SiC

A. Castaldini, A. Cavallini, Lorenzo Rigutti et al. · Applied Physics Letters · 2004 · 105 citations

Engineering, Materials Engineering, Materials Science +17

Minimum Ionizing and Alpha Particles Detectors Based on Epitaxial Semiconductor Silicon Carbide

F. Nava, P. Vanni, M. Bruzzi et al. · IEEE Transactions on Nuclear Science · 2004 · 82 citations

Engineering, Electrical Engineering, Materials Science +17