Selective metalorganic chemical vapour deposition for GaAs planar technology

Selective Epitaxial Deposition of Gallium Arsenide in Holes

Don W. Shaw · Journal of The Electrochemical Society · 1966 · 87 citations

Engineering, Materials Engineering, Materials Science +16

Selective MOCVD epitaxy for optoelectronic devices

R. Azoulay, N. Bouadma, J.C. Bouley et al. · Journal of Crystal Growth · 1981 · 60 citations

Engineering, Materials Engineering, Materials Science +14

Selenium implantation in GaAs

Kenji Gamo, T. Inada, S. Krekeler et al. · Solid-State Electronics · 1977 · 53 citations

Engineering, Electrical Engineering, Materials Science +10

Thermal Expansion Coefficients and Lattice Parameters between 10° and 65°C in the System GaP-GaAs

M. E. Straumanis, J.‐P. Krumme, M. Rubenstein · Journal of The Electrochemical Society · 1967 · 51 citations

Natural Sciences, Materials Science, Physics +16

Photoluminescence Study of Carbon Doped Gallium Arsenide

Masashi Ozeki, Kenya Nakai, K. Dazai et al. · Japanese Journal of Applied Physics · 1974 · 50 citations

Natural Sciences, Materials Engineering, Materials Science +15