Japanese Journal of Applied Physics · 1994 · 11 citations · 9 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesLaser DiodesOptical SourcesSemiconductor HeterostructuresSemiconductor LasersSilicon PhotonicsThermal Properties Of SemiconductorsCarrier ConfinementContinuous-wave LasersHeterostructure DevicesLaser ThresholdReflectivityThermal ConductivityThreshold Current ReductionVertical-cavity Surface-emitting Lasers
We have fabricated continuous wave (cw) GaInAsP/InP vertical-cavity surface emitting lasers. For effective carrier confinement, we employed a planar buried heterostructure grown by a single-step maskless regrowth process. In addition, we introduced a novel multilayer mirror consisting of magnesia (MgO) and silicon (Si), which provides high reflectivity and high thermal conductivity simultaneously. Both threshold reduction and improvement of the highest cw temperature were clearly demonstrated by this new mirror; the highest cw temperature of 14° C was achieved with the threshold current of 22 mA. From the comparison of threshold current between cw and pulsed conditions, the increase of device temperature by the cw injection was estimated to be 8–15 K.
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