Journal of Applied Physics · 1983 · 64 citations · 4 references
Materials ScienceIi-vi SemiconductorCadmium TellurideEngineeringNatural SciencesSurface ScienceApplied PhysicsCondensed Matter PhysicsAtomic PhysicsSolid-state ChemistryB FaceCdxhg1−xte GrownChemistryQuantum ChemistryCrystallography
This paper resolves the inconsistency in the literature on the determination of the polarity of CdTe and CdxHg1−xTe from their etching behavior. The etch (H2O:H2O2:HF, 2:2:3 v/v) has been shown to reveal pits on the Cd (111) A face and not on the Te (1̄1̄1̄) B face in contradiction to the previously published work of Warekois, Lavine, Mariano, and Gatos [J. Appl. Phys. 33, 690 (1962)] and Nakagawa, Maeda, and Takeuchi [Appl. Phys. Lett. 34, 574 (1979)]. This result agrees with the observations of Fewster, Cole, Willoughby, and Brown [J. Appl. Phys. 52, 4568 (1981)] for CdxHg1−xTe grown epitaxially on CdTe.
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Crystallographic Polarity in the II-VI Compounds
E. P. Warekois, M. C. Lavine, Anthony N. Mariano et al. · Journal of Applied Physics · 1962 · 238 citations
Materials Science, Inorganic Chemistry, Materials Engineering +14