Applied Physics Letters · 1994 · 18 citations · 16 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsMaterials PhysicsSemiconductor DevicesElectrical ConductivityElectronic Material CharacterizationMetal-semiconductor ContactsSemiconductor Device MaterialsSemiconductor InterfacesThin Film Electrical PropertiesAnnealingAnnealing Temperature EffectsContact ResistanceInterface ResistanceOhmic ConductionOhmic ContactsTransmission Line ModelingTransmission Line Theory
Low resistance Ohmic contacts of Au(Pt)Pd to p-ZnTe were studied. The specific contact resistance of these contacts depends strongly on the annealing temperature and the Pd layer thickness. The specific contact resistance, measured by the transmission line model, is as low as 5×10−6 Ω cm2 when a sample is annealed at 200 °C. The optimum Pd layer thickness is 5–10 nm. This value of the specific contact resistance is two orders of magnitude lower than that of Au or Pt contacts to p-ZnTe. The depth profiles of these contacts were investigated by Auger electron spectroscopy. The possible role of the Pd layer is discussed.
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The work function of the elements and its periodicity
Herbert B. Michaelson · Journal of Applied Physics · 1977 · 4.2K citations
M. A. Haase, Jun Qiu, J. M. DePuydt et al. · Applied Physics Letters · 1991 · 1.6K citations
Models for contacts to planar devices
H.H. Berger · Solid-State Electronics · 1972 · 917 citations
Engineering, Electrical Engineering, Electronic Materials +5
Models for contacts to planar devices
Microelectronics Reliability · 1972 · 818 citations
Engineering, Electrical Engineering, Electronic Materials +5