Room-temperature operations of memory devices based on self-assembled InAs quantum dot structures

Abstract

Memory devices have been fabricated in high-electron-mobility transistors with embedded InAs quantum dots (QDs). We show that memory operations can be fully controlled by gate biases at room temperature, without the need for light excitations to erase memory states. Real-time measurements indicate a charge retention time of a few minutes. Neither such retention time nor the self-consistent simulations can justify the picture that the memory effect is due to charging/discharging of intrinsic QD states. Experiments at a series of gate biases point to the presence of deep levels coexisting in the QD layer(s), which are responsible for the memory effect.