Crystal Research and Technology · 1988 · 11 citations · 13 references
Natural SciencesMaterials EngineeringMaterials ScienceMaterials ChemistrySemiconductor MaterialsThin FilmsChemical Vapor DepositionEpitaxial GrowthMetal OxidesOxide SemiconductorsThin-film DepositionThin-film MaterialsAtmospheric PressureEpitaxial Film GrowthMetal-organic Chemical Vapor DepositionMetalorganic Chemical Vapor DepositionResistivitySemiconductor Oxide Thin FilmsThin Oxide FilmsZinc Oxides
Abstract Thin uniform films of ZnO could be obtained by MOCVD using Zn(CH 3 ) 2 ‐THF adduct and H 2 O as reactants. The film growth was carried out at atmospheric pressure. A vertical resistance‐heated cold‐wall reactor system was used. Highly c ‐axis oriented ZnO films being very smooth and having a low resistivity were grown on (100)Si and (100)Si/SiO 2 under certain conditions. Epitaxial growth could be achieved on (1 1 02)‐sapphire. The dependence of the properties of the films on the growth conditions was investigated.
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