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Preparation and electrical properties of InSb thin films heavily doped with tellurium, selenium and sulphur

DOI

28

Citations

10

References

1984

Year

T. Berus, Jacek Goc, Marek Nowak, M. Oszwałdowski, M. Zimpel
Thin Solid Films

References

YearCitations

Heavily Doped Semiconductors

V.I. Fistul, J. S. Blakemore

American Journal of Physics

1969

503

Grain Boundary Barriers in Germanium

William Edwin Taylor, Newton Hays Odell, Heng Fan

Physical Review

1952

229

Ionization Interaction between Impurities in Semiconductors and Insulators

R. L. Longini, Richard Greene

Physical Review

1956

141

Carrier mobility and field effect in thin indium antimode films

C.H. Ling, J.H. Fisher, J.C. Anderson

Thin Solid Films

1972

56

The Electron Mobility and Thermoelectric Power in InSb at Atmospheric and Hydrostatic Pressures

E. Litwin‐Staszewska, W. Szymańska, R. Piotrzkowski

physica status solidi (b)

1981

52

Thickness Dependence of Electron Mobility of InSb Films

H. H. Wieder

Journal of Vacuum Science and Technology

1972

25

Influence of pressure on the mobility in heavily doped n‐type indium antimonide

E. Litwin‐Staszewska, S. Porowski, A. A. Filipchenko

physica status solidi (b)

1971

24

Heavily doped crystals of n-type indium antimonide

A. S. Filipchenko, D. N. Nasledov

physica status solidi (a)

1975

15

Multiple-pass zone melting of InSb thin films

M. Oszwałdowski, H. Szweycer, T. Berus,

Thin Solid Films

1981

10

Inelastic Scattering of Electrons by Optic Phonons in InSb‐Type Semiconductors

P. Pfeffer, W. Zawadzki

physica status solidi (b)

1978

10

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