Preparation and electrical properties of InSb thin films heavily doped with tellurium, selenium and sulphur

Heavily Doped Semiconductors

V.I. Fistul, J. S. Blakemore · American Journal of Physics · 1969 · 503 citations · Full text

Semiconductors, Semiconductor Technology, Electrical Engineering +5

Grain Boundary Barriers in Germanium

William Edwin Taylor, Newton Hays Odell, Heng Fan · Physical Review · 1952 · 229 citations

Engineering, High Resistance, Nanoelectronics +18

Ionization Interaction between Impurities in Semiconductors and Insulators

R. L. Longini, Richard Greene · Physical Review · 1956 · 141 citations

Semiconductors, Free Energy, Electrical Engineering +15

Carrier mobility and field effect in thin indium antimode films

C.H. Ling, J.H. Fisher, J.C. Anderson · Thin Solid Films · 1972 · 56 citations

Engineering, Physics, Carrier Mobility +5

The Electron Mobility and Thermoelectric Power in InSb at Atmospheric and Hydrostatic Pressures

E. Litwin‐Staszewska, W. Szymańska, R. Piotrzkowski · physica status solidi (b) · 1981 · 52 citations

Engineering, Electrothermal, Experimental Thermodynamics +21