High-temperature growth of thick AlN layers on sapphire (0 0 0 1) substrates by solid source halide vapor-phase epitaxy

The estimation of dislocation densities in metals from X-ray data

Peter Gay, P. B. Hirsch, Anthony E. Kelly · Acta Metallurgica · 1953 · 513 citations

Materials Science, Materials Engineering, Dislocation Densities +10

Some effects of oxygen impurities on AlN and GaN

Glen A. Slack, L. J. Schowalter, Donald T. Morelli et al. · Journal of Crystal Growth · 2002 · 405 citations

Materials Engineering, Aluminium Nitride, Engineering +5

Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate

Kensaku Motoki, Takuji Okahisa, Naoki Matsumoto et al. · Japanese Journal of Applied Physics · 2001 · 311 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +13

Seeded growth of AlN bulk single crystals by sublimation

R. Schlesser, Rafael Dalmau, Zlatko Sitar · Journal of Crystal Growth · 2002 · 124 citations

Materials Science, Aluminium Nitride, Engineering +6

High-Temperature Metal-Organic Vapor Phase Epitaxial Growth of AlN on Sapphire by Multi Transition Growth Mode Method Varying V/III Ratio

Masataka Imura, Kiyotaka Nakano, Naoki Fujimoto et al. · Japanese Journal of Applied Physics · 2006 · 110 citations

Materials Engineering, Materials Science, Aluminium Nitride +13