Applied Physics Letters · 1989 · 31 citations · 22 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsSemiconductor MaterialsOptical Properties Of SemiconductorsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsStrain EngineeringThermal Properties Of SemiconductorsHeterostructuresLow-temperature GrowthMolecular Beam EpitaxySemiconductor CharacterizationStrain EffectsThermal ExpansionThermal Expansion CoefficientThermal Expansion Effects
Residual strains in (001) and (111) thick layers of CdTe and ZnTe grown by molecular beam epitaxy on nominal or slightly tilted (001) GaAs have been investigated by reflectance, photoluminescence, and optical pumping experiments at low temperature. Strains are found to be independent of both layer orientations and thicknesses in the range 2–6 μm. They are compressive ≊−0.5×10−3 in CdTe and tensile ≊10−3 in ZnTe. Estimates of thermal expansion effects show that they are the dominant cause of residual strains in these heterostructures.
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