Physical review. B, Solid state · 1970 · 235 citations · 23 references
Wide-bandgap SemiconductorEngineeringOptical Transmission SystemElectronic StructureSemiconductorsIi-vi SemiconductorWavelength-modulation SpectraOptical PropertiesReflectivity PeaksPhotonicsPhotoluminescencePhysicsSemiconductor MaterialWavelength TuningApplied PhysicsCondensed Matter PhysicsCrystalsThermoreflectance DataOptoelectronics
The spectral range extends from 1.75 to 6.0 eV. Using existing band structures, all reflectivity peaks are consistently assigned to critical transitions between valence and conduction bands. Wavelength‑modulation spectra of GaAs, GaSb, InAs, InSb, Ge, and Si at 5, 80, and 300 K reveal new structures, are compared with electroreflectance and thermoreflectance data, enable calculation of spin‑orbit splittings at several symmetry points, and show temperature‑dependent band‑spectra effects.
Wavelength-modulation spectra of GaAs, GaSb, InAs, InSb, Ge, and Si at 5,80, and 300\ifmmode^\circ\else\textdegree\fi{}K are presented. The spectral range extends from 1.75 to 6.0 eV. The results are compared with electroreflectance and thermoreflectance data. New structures are found in the spectra of all crystals. With the help of existing band structures of these crystals, all the reflectivity peaks can be consistently assigned to proper critical transitions between the valence and the conduction bands. Values of spin-orbit splittings at several symmetry points can be calculated. Temperature effects on the band spectra are discussed.
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