GaAs/AlGaAs ridge waveguide laser monolithically integrated with a photodetector using ion beam etching

Abstract

A GaAs/AlGaAs ridge waveguide laser is monolithically integrated with a monitoring photodiode. The laser diode and the photodiode have, respectively, vertical and slanted etched facets fabricated by an ion beam etching (IBE) process. The laser threshold currents range from 25 mA to 45 mA and the photodiode has a sensitivity of 5μA/mW at unbiased voltage.