Integrated GaAs-Al<i>x</i>Ga1−<i>x</i>As injection lasers and detectors with etched reflectors

Abstract

An integrated injection laser-waveguide-detector device is described, fabricated from AlxGa1−xAs layers grown by liquid-phase epitaxy. Reflectors are formed by a two-step preferential etch procedure. For a laser cavity formed by one etched reflector and one cleaved mirror, an overall differential transfer efficiency of 10±1% has been measured at the detector after transmission through a 1-μm-thick passive waveguide 250 μm long. If both reflectors are etched, efficiencies as high as 2% are still observed.