Electrical characterization of thin Al2O3 films grown by atomic layer deposition on silicon and various metal substrates

High-κ gate dielectrics: Current status and materials properties considerations

G. D. Wilk, Robert M. Wallace, J. Anthony · Journal of Applied Physics · 2001 · 5.9K citations

Engineering, Materials Engineering, Materials Science +17

Band offsets of wide-band-gap oxides and implications for future electronic devices

John Robertson · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2000 · 2K citations

Engineering, Materials Engineering, Materials Science +17

The electronic structure at the atomic scale of ultrathin gate oxides

David A. Muller, T. Sorsch, S. Moccio et al. · Nature · 1999 · 961 citations

Natural Sciences, Materials Science, Physics +16

Surface Chemistry for Atomic Layer Growth

Steven M. George, A. W. Ott, J. W. Klaus · The Journal of Physical Chemistry · 1996 · 676 citations

Natural Sciences, Chemistry, Materials Science +17

Al3O3 thin film growth on Si(100) using binary reaction sequence chemistry

A. W. Ott, J. W. Klaus, J. M. Johnson et al. · Thin Solid Films · 1997 · 512 citations

Natural Sciences, Chemistry, Materials Science +14