Journal of Applied Physics · 2014 · 20 citations · 27 references
Natural SciencesMaterials SciencePhysicsMaterials PhysicsOptical MaterialsSpectroscopyAbsorption SpectroscopyElectronic Band StructureInfrared SpectroscopyOptical Properties Of MaterialsOptical Properties Of SemiconductorsOptical Properties Of SolidsAbsorption SpectraBand GapBand Gap EnergyInfrared TransmissionOptical AbsorptionOptical Absorption CoefficientOptical Band GapTemperature Dependence
The optical absorption edge of bulk CdTe single crystal was measured by infrared transmission under saturated Cd pressure in the temperature interval 295–1223 K. The absorption coefficient was directly determined up to the value of 100 cm−1. For higher values, it was estimated by extrapolating the spectra according to the Urbach exponential rule. It was observed that the common temperature-independent intersection of extrapolated Urbach absorption edge, the “Urbach focus,” does not exist in CdTe. The temperature dependence of band-gap energy Eg defined by Eg(300 K) = 1.518 eV and dEg/dT = − 4.4 × 10−4 eV/K was established, postulating linear temperature dependence of Eg by fitting the temperature dependent absorption coefficient at the band edge αg(T) = 6600 – 4T (K) (cm−1).
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Temperature dependence of the energy gap in semiconductors
Y. P. Varshni · Physica · 1967 · 5.3K citations
Disorder and the Optical-Absorption Edge of Hydrogenated Amorphous Silicon
George D. Cody, T. Tiedje, B. Abeles et al. · Physical Review Letters · 1981 · 1.2K citations