GaInP/AlGaInP strained quantum wells grown using atmospheric pressure organometallic vapor phase epitaxy

Defects in epitaxial multilayers I. Misfit dislocations

Jacqueline M. Matthews · Journal of Crystal Growth · 1974 · 3.1K citations

Natural Sciences, Materials Engineering, Materials Science +14

Theoretical calculations of heterojunction discontinuities in the Si/Ge system

Chris G. Van de Walle, Richard M. Martin · Physical review. B, Condensed matter · 1986 · 1.4K citations

Natural Sciences, Materials Science, Physics +17

Superlattice band structure in the envelope-function approximation

G. Bastard · Physical review. B, Condensed matter · 1981 · 1.3K citations

Natural Sciences, Materials Science, Physics +17

Reduction of lasing threshold current density by the lowering of valence band effective mass

Eli Yablonovitch, E. O. Kane · Journal of Lightwave Technology · 1986 · 450 citations

Engineering, Electrical Engineering, Materials Science +17

Growth of high-quality inGaAIP epilayers by MOCVD using methyl metalorganics and their application to visible semiconductors lasers

Yasuo Ohba, M. Ishikawa, Hideto Sugawara et al. · Journal of Crystal Growth · 1986 · 169 citations

Engineering, Materials Engineering, Materials Science +16