Low frequency noise in MOS transistors—II Experiments

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	Year	Citations
The effects of oxide traps on the MOS capacitance F.P. Heiman, G. Warfield IEEE Transactions on Electron Devices SemiconductorsDevice ModelingElectrical EngineeringSemiconductor TechnologySemiconductor Surface	1965	435
Low frequency noise in MOS transistors—I Theory S. Christensson, Ingemar Lundström, C. Svensson Solid-State Electronics EngineeringBias Temperature InstabilityApplied PhysicsLow Frequency NoiseNoise	1968	435
Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structures Andrew S. Grove, B. E. Deal, E. H. Snow, Solid-State Electronics Materials ScienceEngineeringOxide ElectronicsSurface ScienceApplied Physics	1965	416
Lateral AC current flow model for metal-insulator-semiconductor capacitors E. H. Nicollian, A. Goetzberger IEEE Transactions on Electron Devices EngineeringPower ElectronicsCharge TransportMetal-insulator-semiconductor CapacitorsSemiconductor Device	1965	138
Limitations of the MOS capacitance method for the determination of semiconductor surface properties K.H. Zaininger, G. Warfield IEEE Transactions on Electron Devices Semiconductor Surface PropertiesEngineeringMos Capacitance MethodOxide CapacitanceSemiconductor Device	1965	132
Low frequency noise in MOS field effect transistors I. Flinn, G. Bew, F. Berz Solid-State Electronics Electrical EngineeringEngineeringBias Temperature InstabilityApplied PhysicsLow Frequency Noise	1967	32

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