Spectroscopic evidence for the hydrogen passivation of zinc acceptors in gallium arsenide

Abstract

Infrared absorption lines observed at low temperatures in Zn-doped GaAs epilayers passivated with hydrogen and deuterium are ascribed to As-H and As-D stretching modes where the As atom involved is the first neighbour of the Zn acceptor. This attribution is shown to be consistent with a model for hydrogen passivation of acceptors on gallium sites in GaAs.