Transresistance and current gain of high-<i>T</i> <i>c</i> flux flow transistors

Abstract

The transresistance and current gain of high-Tc flux flow transistors were investigated phenomenologically and experimentally in relation to the flux flow characteristics of the devices. It was shown that the transresistance was in proportion to the vortex flow velocity, the channel width, and the magnetic coupling coefficient between the channel and the control current line. The devices were fabricated from thin films of coevaporated NdCeCuO, and the control current dependence of their transresistance was measured. It was found that the transresistance peak appeared at a high control current level that corresponded to the saturation of the flow voltage. The peak value of the transresistance was 1.25 Ω. The flow voltage saturation mechanism is discussed in relation to the channel etching of the devices.