A model and equivalent circuit for a superconducting flux flow transistor

Abstract

A three-terminal high-frequency active device made of a single film of a high T/sub c/ superconductor that is based on the magnetic control of flux flow is presented. The device is composed of parallel weak links with a nearby magnetic control line. A model has been developed that is based on solving the equation of motion of Abrikosov vortices subject to Lorentz viscous and pinning forces, as well as magnetic surface barriers. The model has been used to predict device transit time (computed from flux velocity) and device I-V curves. The predictions are compared to measured parameters with resulting very good agreement.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>